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For Reference Only

Part Number FDB33N25TM
Manufacturer ON Semiconductor
Description MOSFET N-CH 250V 33A D2PAK
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In Stock 13,835
Estimated Delivery May 29 - Jun 3 (Choose Expedited Shipping)

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FDB33N25TM Resources

FDB33N25TM Specifications

ManufacturerON Semiconductor
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs94mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs48nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2135pF @ 25V
FET Feature-
Power Dissipation (Max)235W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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